新低10mΩ SiC mosfet in TO-247，额定电压为900V

2016 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2016-03-20 DOI:10.1109/APEC.2016.7467989

V. Pala, Gangyao Wang, B. Hull, S. Allen, J. Casady, J. Palmour

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引用次数: 16

摘要

我们在TO-247封装中展示了900V SiC MOSFET，其ON电阻为10 mΩ，创历史新低。由于其创纪录的低比导通电阻和低Rds、ON温度系数，900V SiC mosfet可以远远超过分立封装中igbt的电流密度。SiC mosfet还具有坚固，低反向恢复体二极管，这使得它们适合具有双向传导的硬开关和软开关拓扑结构。由于第一和第三象限的无膝传导，低开关损耗和低体二极管反向恢复损耗，它们还可以实现优越的轻负载效率。

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Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V

We demonstrate a 900V SiC MOSFET with a record-low ON resistance of 10 mΩ in a TO-247 package. Due to their record low specific ON resistance, and a low Rds,On temperature coefficient, 900V SiC MOSFETs can far exceed the current densities of IGBTs in discrete packages. SiC MOSFETs also have a robust, low reverse recovery body diode which makes them suited to hard-switched and soft-switched topologies with bi-directional conduction. They can also achieve superior light load efficiencies due to knee-less conduction in both 1st and 3rd quadrant, low switching losses and low body diode reverse recovery losses.

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2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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