Analysis and improvement of photo-thermoelectric current in waveguide-fed Graphene FETs

In this article, we determine the elevated temperature of hot carriers in Graphene layer (Tel) in a waveguidefed Graphene FET (GFET) and examine its effect on photo-thermoelectric current that can be sensed at the electrodes of the GFET. Also we introduce an improvement in the Tel and, accordingly, photo-thermoelectric current by adding a second waveguide at the top of the device to produce a coupled mode with the first waveguide. We also suggest that this structure would be able to decrease the size of integrated circuits by enabling coupling and photo-detection to perform simultaneously.