有界半导体的热电性能图

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI:10.1109/ICT.1996.553295

G. Logvinov, V. Zakordonets

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引用次数: 1

摘要

在考虑体积和表面参数的情况下，研究了热电优值。电子和声子的温度应该是不同的。结果表明，当电子子系统与恒温器各向同性热接触，声子子系统与恒温器绝热接触时，热电优值随样品尺寸的减小而增大。

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Thermoelectric figure of merit of bounded semiconductors

The thermoelectric figure of merit is investigated, taking bulk and surface parameters into account. The electron and phonon temperatures are supposed to be different. It is shown that the thermoelectric figure of merit increases as sample dimensions decrease when the electron subsystem has an isotropic heat contact with the thermostat and the phonon subsystem has an adiabatical one.

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Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96

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