Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering

A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.