基于单层二硫化钼(MoS2)的高响应光电探测器

2016 Asia Communications and Photonics Conference (ACP) Pub Date : 2016-11-02 DOI:10.1364/ACPC.2016.AF3F.5

Tianyou Zhang, Yujie Chen, Pengfei Xu, Zeru Wu, Yanfeng Zhang, Lin Liu, Chunchuan Yang, Hui-Xuan Chen, Siyuan Yu

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引用次数: 1

摘要

高响应超灵敏光电探测器在各个领域的广泛应用至关重要。本工作展示了一种高灵敏度的光电探测器，该探测器由单层二硫化钼(MoS2)制成，这是一种很有前途的过渡金属二硫族半导体，在可见光区域的波长范围内显示出很好的光响应性(230 mA/W @532 nm)。

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High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS2)

High-responsivity ultra-sensitive photodetectors are crucial for a broad range of applications in various fields. This work demonstrates a highly sensitive photodetector fabricated by using monolayer molybdenum disulfide (MoS2), a promising semiconductor from the family of transition-metal dichalcogenide, showing a promising photoresponsivity (230 mA/W @532 nm) in the wavelength of visible light region.

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2016 Asia Communications and Photonics Conference (ACP)

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