{"title":"半导体微结构的远红外表征","authors":"S. Perkowitz","doi":"10.1109/irmm.1987.9127014","DOIUrl":null,"url":null,"abstract":"Intricate semiconductor microstructures require varied methods to examine their properties. Far infrared (FIR) spectroscopy (10–400 cm−1) is contactless and nondestructive. A key to the technique is the simplicity of the FIR superlattice (SL) dielectric function, which at normal incidence is (1)","PeriodicalId":399243,"journal":{"name":"1987 Twelth International Conference on Infrared and Millimeter Waves","volume":"127 18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Far infrared characterization of semiconductor microstructures\",\"authors\":\"S. Perkowitz\",\"doi\":\"10.1109/irmm.1987.9127014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Intricate semiconductor microstructures require varied methods to examine their properties. Far infrared (FIR) spectroscopy (10–400 cm−1) is contactless and nondestructive. A key to the technique is the simplicity of the FIR superlattice (SL) dielectric function, which at normal incidence is (1)\",\"PeriodicalId\":399243,\"journal\":{\"name\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"volume\":\"127 18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/irmm.1987.9127014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 Twelth International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/irmm.1987.9127014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Far infrared characterization of semiconductor microstructures
Intricate semiconductor microstructures require varied methods to examine their properties. Far infrared (FIR) spectroscopy (10–400 cm−1) is contactless and nondestructive. A key to the technique is the simplicity of the FIR superlattice (SL) dielectric function, which at normal incidence is (1)
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