基于0.18 μm SiGe BiCMOS技术的低功耗100 GHz静态CML分频器

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2023-01-22 DOI:10.1109/SiRF56960.2023.10046259

Hao-Yu Chien, Christopher Chen, J. Woo, S. Pamarti, C. Yang, Mau-Chung Frank Chang

{"title":"基于0.18 μm SiGe BiCMOS技术的低功耗100 GHz静态CML分频器","authors":"Hao-Yu Chien, Christopher Chen, J. Woo, S. Pamarti, C. Yang, Mau-Chung Frank Chang","doi":"10.1109/SiRF56960.2023.10046259","DOIUrl":null,"url":null,"abstract":"A100 GHz wideband static divider is implemented on a 0. 1S$\\mu$mSiGe BiCMOS technology. The divider achieves a self-resonant frequency (SRF) of 92.5 GHz with a maximum dividing frequency of 100 GHz. The required input power is less than 0dBm across the entire operating range. The divider consumes 66 mW. The circuit has a 100 x SO $\\mu \\mathrm{m}^{2}$ active area","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low Power 100 GHz Static CML Frequency Divider in 0.18 μm SiGe BiCMOS Technology\",\"authors\":\"Hao-Yu Chien, Christopher Chen, J. Woo, S. Pamarti, C. Yang, Mau-Chung Frank Chang\",\"doi\":\"10.1109/SiRF56960.2023.10046259\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A100 GHz wideband static divider is implemented on a 0. 1S$\\\\mu$mSiGe BiCMOS technology. The divider achieves a self-resonant frequency (SRF) of 92.5 GHz with a maximum dividing frequency of 100 GHz. The required input power is less than 0dBm across the entire operating range. The divider consumes 66 mW. The circuit has a 100 x SO $\\\\mu \\\\mathrm{m}^{2}$ active area\",\"PeriodicalId\":354948,\"journal\":{\"name\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF56960.2023.10046259\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

一个100ghz宽带静态分频器是在一个0。$ $ $ $ $mSiGe BiCMOS技术。该分频器自谐振频率(SRF)为92.5 GHz，最大分频频率为100 GHz。在整个工作范围内，所需的输入功率小于0dBm。分压器消耗66兆瓦。电路有一个100 x SO $\mu \ mathm {m}^{2}$的活动区域

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A Low Power 100 GHz Static CML Frequency Divider in 0.18 μm SiGe BiCMOS Technology

A100 GHz wideband static divider is implemented on a 0. 1S$\mu$mSiGe BiCMOS technology. The divider achieves a self-resonant frequency (SRF) of 92.5 GHz with a maximum dividing frequency of 100 GHz. The required input power is less than 0dBm across the entire operating range. The divider consumes 66 mW. The circuit has a 100 x SO $\mu \mathrm{m}^{2}$ active area

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2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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