{"title":"纳米掺杂聚合物基x射线图像探测器的灵敏度","authors":"Naimul Hassan, S. A. Mahmood","doi":"10.1109/ICECE.2016.7853879","DOIUrl":null,"url":null,"abstract":"The X-ray sensitivity of direct conversion X-ray image detectors based on poly(triarylamine) (PTAA) doped with bismuth oxide (Bi2O3) nanoparticle is determined for mammography. Using COMSOL Multiphysics 5.0, the continuity equations are solved considering drift of charge carriers in the presence of deep traps. The recombination between drifting charge carriers and nonuniform electric field across the photoconductor layer is also considered. Poole-Frenkel mechanism has been considered for electric field dependent mobility of charge carriers. A very promising X-ray sensitivity of 1.3295µC/cm2R has been found at an applied electric field of 10V/µm. The calculated sensitivity has been compared with that of the commercially available amorphous selenium (a-Se) based direct conversion X-ray image detector.","PeriodicalId":122930,"journal":{"name":"2016 9th International Conference on Electrical and Computer Engineering (ICECE)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sensitivity of a nanodoped polymer based X-ray image detector\",\"authors\":\"Naimul Hassan, S. A. Mahmood\",\"doi\":\"10.1109/ICECE.2016.7853879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The X-ray sensitivity of direct conversion X-ray image detectors based on poly(triarylamine) (PTAA) doped with bismuth oxide (Bi2O3) nanoparticle is determined for mammography. Using COMSOL Multiphysics 5.0, the continuity equations are solved considering drift of charge carriers in the presence of deep traps. The recombination between drifting charge carriers and nonuniform electric field across the photoconductor layer is also considered. Poole-Frenkel mechanism has been considered for electric field dependent mobility of charge carriers. A very promising X-ray sensitivity of 1.3295µC/cm2R has been found at an applied electric field of 10V/µm. The calculated sensitivity has been compared with that of the commercially available amorphous selenium (a-Se) based direct conversion X-ray image detector.\",\"PeriodicalId\":122930,\"journal\":{\"name\":\"2016 9th International Conference on Electrical and Computer Engineering (ICECE)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 9th International Conference on Electrical and Computer Engineering (ICECE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECE.2016.7853879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 9th International Conference on Electrical and Computer Engineering (ICECE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE.2016.7853879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sensitivity of a nanodoped polymer based X-ray image detector
The X-ray sensitivity of direct conversion X-ray image detectors based on poly(triarylamine) (PTAA) doped with bismuth oxide (Bi2O3) nanoparticle is determined for mammography. Using COMSOL Multiphysics 5.0, the continuity equations are solved considering drift of charge carriers in the presence of deep traps. The recombination between drifting charge carriers and nonuniform electric field across the photoconductor layer is also considered. Poole-Frenkel mechanism has been considered for electric field dependent mobility of charge carriers. A very promising X-ray sensitivity of 1.3295µC/cm2R has been found at an applied electric field of 10V/µm. The calculated sensitivity has been compared with that of the commercially available amorphous selenium (a-Se) based direct conversion X-ray image detector.