基于电流偏置的高q纵模硅谐振器非线性有源电子抵消

Haoshen Zhu, Cheng Tu, Joshua E-Y Lee, L. Rufer
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引用次数: 4

摘要

在本文中,我们首次报道了在体模微机械谐振器中非线性行为的操纵。采用电容驱动和压阻传感器对具有相同尺寸但不同晶体取向的n掺杂单晶硅(SCS)谐振器进行了电学表征。值得注意的是,由于增加偏置直流电流,在器件中观察到反向非线性行为(从弹簧软化到硬化)。我们发现,在从弹簧软化到硬化的转变过程中,谐振器的储能能力提高了10倍以上。这种新发现的电子“抵消非线性”的能力可以方便地应用于改善MEMS振荡器的相位噪声(PN)性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Active electronic cancellation of nonlinearity in a High-Q longitudinal-mode silicon resonator by current biasing
In this paper, we report the manipulation of nonlinear behavior in a bulk-mode micromechanical resonator for the first time. N-doped single-crystal-silicon (SCS) resonators of the same dimensions but different crystal orientations (<;100> and <;110>) were electrically characterized using capacitive drive and piezoresistive sense. Notably, reversed nonlinear behavior (from spring softening to hardening) was observed in the <;100> devices as a result of increasing the bias dc current. We have found that the energy storage capability of the resonator has been enlarged by over 10 times at the transition from spring softening to hardening. This newfound capability to electronically "cancel nonlinearity" could be conveniently applied to improve the phase noise (PN) performance of MEMS oscillators.
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