使用 Elementwise 压印印章进行紫外线纳米压印光刻技术

Jun‐ho Jeong, Y. Sim, H. Sohn, Eung-sug Lee
{"title":"使用 Elementwise 压印印章进行紫外线纳米压印光刻技术","authors":"Jun‐ho Jeong, Y. Sim, H. Sohn, Eung-sug Lee","doi":"10.1109/ICMENS.2004.150","DOIUrl":null,"url":null,"abstract":"Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. In an attempt to apply a large area stamp to UV-NIL in a low vacuum environment, we have proposed a new UV-NIL process using an element-wise embossed stamp (EES), which consists of a number of elements, each of which is separated by channels. Nano-scale patterns of each element were fabricated using e-beam lithography and an etching process in which a Cr film was employed as a hard mask for transferring nanostructures to a quartz plate. Before pressing the EES, low viscosity resin droplets with a nano-liter volume were dispensed on each element of the EES. Experiments on UV-NIL were performed on an EVG620-NIL. 380 nm - 1 µm features of the EES were successfully transferred to 4 in. wafers. We measured patterns and residual layers on the imprinted wafers to evaluate the potential of the proposed process. Experiments showed that the EES enables UV-NIL using a large-area stamp in a low vacuum environment.","PeriodicalId":344661,"journal":{"name":"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"UV Nanoimprint Lithography Using an Elementwise Embossed Stamp\",\"authors\":\"Jun‐ho Jeong, Y. Sim, H. Sohn, Eung-sug Lee\",\"doi\":\"10.1109/ICMENS.2004.150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. In an attempt to apply a large area stamp to UV-NIL in a low vacuum environment, we have proposed a new UV-NIL process using an element-wise embossed stamp (EES), which consists of a number of elements, each of which is separated by channels. Nano-scale patterns of each element were fabricated using e-beam lithography and an etching process in which a Cr film was employed as a hard mask for transferring nanostructures to a quartz plate. Before pressing the EES, low viscosity resin droplets with a nano-liter volume were dispensed on each element of the EES. Experiments on UV-NIL were performed on an EVG620-NIL. 380 nm - 1 µm features of the EES were successfully transferred to 4 in. wafers. We measured patterns and residual layers on the imprinted wafers to evaluate the potential of the proposed process. Experiments showed that the EES enables UV-NIL using a large-area stamp in a low vacuum environment.\",\"PeriodicalId\":344661,\"journal\":{\"name\":\"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-08-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMENS.2004.150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMENS.2004.150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

紫外-纳米压印光刻(UV-NIL)是一种在室温和低压条件下经济高效地确定纳米级结构的有效方法。为了在低真空环境下将大面积印章应用于 UV-NIL,我们提出了一种新的 UV-NIL 工艺,即使用元素压印印章 (EES),该印章由多个元素组成,每个元素之间由通道隔开。我们使用电子束光刻技术和蚀刻工艺制作了每个元素的纳米级图案,在蚀刻工艺中使用了铬薄膜作为硬掩膜,将纳米结构转移到石英板上。在压制 EES 之前,在 EES 的每个元件上分配了纳升体积的低粘度树脂液滴。UV-NIL 实验在 EVG620-NIL 上进行。EES 的 380 nm - 1 µm 特征被成功转移到 4 英寸晶片上。我们测量了压印晶片上的图案和残留层,以评估拟议工艺的潜力。实验表明,EES 能够在低真空环境下使用大面积印章进行 UV-NIL 工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
UV Nanoimprint Lithography Using an Elementwise Embossed Stamp
Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. In an attempt to apply a large area stamp to UV-NIL in a low vacuum environment, we have proposed a new UV-NIL process using an element-wise embossed stamp (EES), which consists of a number of elements, each of which is separated by channels. Nano-scale patterns of each element were fabricated using e-beam lithography and an etching process in which a Cr film was employed as a hard mask for transferring nanostructures to a quartz plate. Before pressing the EES, low viscosity resin droplets with a nano-liter volume were dispensed on each element of the EES. Experiments on UV-NIL were performed on an EVG620-NIL. 380 nm - 1 µm features of the EES were successfully transferred to 4 in. wafers. We measured patterns and residual layers on the imprinted wafers to evaluate the potential of the proposed process. Experiments showed that the EES enables UV-NIL using a large-area stamp in a low vacuum environment.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信