Ku波段宽带低相位噪声CMOS压控振荡器

Meng Chuan Gao, Kaiye Bao, F. Huang
{"title":"Ku波段宽带低相位噪声CMOS压控振荡器","authors":"Meng Chuan Gao, Kaiye Bao, F. Huang","doi":"10.1109/ICAM.2016.7813575","DOIUrl":null,"url":null,"abstract":"A broadband low phase noise (PN) CMOS voltage controlled oscillator (VCO) for Ku Band was presented in this paper. 5-bit switches consisting of 1-bit varactor switch and 4-bit switch cap arrays were adopted so as to obtain a wider tune range (TR) from 11.6GHz to 14.83GHz continuously, and the measured KVCO was less than 400MHz/V. The measured PN was −110.69dBc/Hz@1MHz and the differential output power was 0.96dBm at the highest frequency of 14.83GHz. The measured current dissipation of core circuit was 10.48mA, and total current consumption including buffer was 19.8mA from a 1.2V supply. The VCO was fabricated in TSMC 0.13um 1P8M CMOS process. The die area of layout was 351um×707um.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A broadband low phase noise CMOS voltage controlled oscillator for Ku band\",\"authors\":\"Meng Chuan Gao, Kaiye Bao, F. Huang\",\"doi\":\"10.1109/ICAM.2016.7813575\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband low phase noise (PN) CMOS voltage controlled oscillator (VCO) for Ku Band was presented in this paper. 5-bit switches consisting of 1-bit varactor switch and 4-bit switch cap arrays were adopted so as to obtain a wider tune range (TR) from 11.6GHz to 14.83GHz continuously, and the measured KVCO was less than 400MHz/V. The measured PN was −110.69dBc/Hz@1MHz and the differential output power was 0.96dBm at the highest frequency of 14.83GHz. The measured current dissipation of core circuit was 10.48mA, and total current consumption including buffer was 19.8mA from a 1.2V supply. The VCO was fabricated in TSMC 0.13um 1P8M CMOS process. The die area of layout was 351um×707um.\",\"PeriodicalId\":179100,\"journal\":{\"name\":\"2016 International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAM.2016.7813575\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2016.7813575","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种用于Ku波段的宽带低相位噪声CMOS压控振荡器(VCO)。采用由1位变容开关和4位开关帽阵列组成的5位开关,在11.6GHz ~ 14.83GHz范围内连续获得更宽的调谐范围(TR),测量到的KVCO小于400MHz/V。测量PN值为- 110.69dBc/Hz@1MHz,最高频率为14.83GHz时差分输出功率为0.96dBm。在1.2V电源下,芯电路的实测电流损耗为10.48mA,含缓冲器的总电流消耗为19.8mA。VCO采用TSMC 0.13um 1P8M CMOS工艺制备。排样模具面积为351um×707um。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A broadband low phase noise CMOS voltage controlled oscillator for Ku band
A broadband low phase noise (PN) CMOS voltage controlled oscillator (VCO) for Ku Band was presented in this paper. 5-bit switches consisting of 1-bit varactor switch and 4-bit switch cap arrays were adopted so as to obtain a wider tune range (TR) from 11.6GHz to 14.83GHz continuously, and the measured KVCO was less than 400MHz/V. The measured PN was −110.69dBc/Hz@1MHz and the differential output power was 0.96dBm at the highest frequency of 14.83GHz. The measured current dissipation of core circuit was 10.48mA, and total current consumption including buffer was 19.8mA from a 1.2V supply. The VCO was fabricated in TSMC 0.13um 1P8M CMOS process. The die area of layout was 351um×707um.
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