3月前:SRAM预充电电路中电阻性开路缺陷的有效测试

L. Dilillo, P. Girard, S. Pravossoudovitch, A. Virazel, M. Bastian
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引用次数: 7

摘要

在本文中,我们首先详尽地研究了sram预充电路中电阻性开路缺陷的影响。我们发现这些缺陷可能会干扰预充电电路,从而干扰读取操作。这种错误行为可以通过两种类型的动态错误来建模,即未恢复的写错误(unrestore write fault, URWFs)和未恢复的读错误(unrestore read fault, URRFs)。对于这种类型的故障,我们接下来提出了一种新的测试算法,称为March Pre。March Pre的主要优点是它的复杂度,比参考的MATS+算法(5N)低2倍(2.5N)。另一方面,一个明显的缺点是它只针对预充电电路中的故障。然而,凭借其性能,March Pre使得测试和诊断对预充电缺陷敏感的SRAM存储器更容易
本文章由计算机程序翻译,如有差异,请以英文原文为准。
March Pre: an Efficient Test for Resistive-Open Defects in the SRAM Pre-charge Circuit
In this paper, we first present an exhaustive study on the influence of resistive-open defects in the pre-charge circuit of SRAMs. We show that these defects may disturb the pre-charge circuit, thus disturbing the read operation. This faulty behavior can be modeled by two types of dynamic faults called un-restored write faults (URWFs) and un-restored read faults (URRFs). For this type of faults, we next propose a new test algorithm called March Pre. The main advantage of March Pre is its complexity, which is twice lower (2.5N) than that of the reference MATS+ algorithm (5N). On the other side, an obvious shortcoming is that it targets only faults in pre-charge circuits. However, with its properties, March Pre makes the test but also the diagnosis easier in SRAM memories sensitive to pre-charge defects
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