Optimized Design and Application of GaN Based Power Amplifier for C-Ku Band of AESA RADAR

This paper presents the optimized design and application of a C-Ku band for GaN (Gallium Nitrate) based PA (Power Amplifier). PA and LNA are most important sub components of Transmitting and Receiving Module (TRM) for Active Electronically Scan Array (AESA) RADAR. As AESA has n number of patch antenna elements, multiple fabrication techniques, so it is mandatory to explained the updated technologies of design and up-gradation according to new era. According to taken references, can say that, the Self Oscillation (SO) is a effect which cause due to the closed feedback loop in TRM. In the Rx end of the TRM have more losses, to overcome this losses and to achieve greater efficiency of power amplifier, GaN based technology has explained. AESA has the great efficiency of the scanning and seeking as automation of the steering is given and commanded by the chip called FPGA. The reduction of fabrication error according to the theoretical values and practical testing results has updated by the 6 bit phase shiftier, 6 bit attenuator, these working process namely called Collimation. The performance of the 50 W output power, GaN technology based power amplifier with more than 35dBm gain has Power added Efficiency (PAE) is greater than 30 %. The average Fabricated Monolithic Micro Integrated Circuit (MMIC) size is 15 * 15 * 3 mm3 used for Air-born applications. Designing with thermal effect also plays a major role and effects on the components has explained in this paper. The explained GaN technology-based operate up to 180°C with 1500 W/cm2 and thermal packing design will help to increase the gain of PA by 33%.