{"title":"电自旋注入富铁铁铂薄膜到砷化镓","authors":"A. Sinsarp, T. Manago, F. Takano, H. Akinaga","doi":"10.1117/12.799422","DOIUrl":null,"url":null,"abstract":"We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.","PeriodicalId":426962,"journal":{"name":"International Workshop and Conference on Photonics and Nanotechnology","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide\",\"authors\":\"A. Sinsarp, T. Manago, F. Takano, H. Akinaga\",\"doi\":\"10.1117/12.799422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.\",\"PeriodicalId\":426962,\"journal\":{\"name\":\"International Workshop and Conference on Photonics and Nanotechnology\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshop and Conference on Photonics and Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.799422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop and Conference on Photonics and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.799422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide
We fabricated an FePt/MgO tunneling junction (Fe55Pt45) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.
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