CMOS射频和微波集成电路的平滑门电容模型

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI:10.1109/MWSYM.2002.1011693

J. Dobes

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引用次数: 0

摘要

电压和电荷控制的MOSFET栅极电容模型的收敛问题通常是CAD工具的限制因素。本文提出了模型不连续点的指数平滑思想。通过对漏源电压为零时梅耶模型的不连续进行平滑，验证了该方法的有效性。更新后的模型通过一种先进的算法在触发器电路上进行了测试。

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Smoothing gate capacitance models for CMOS radio frequency and microwave integrated circuits CAD

Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. In paper, an idea of exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model at zero drain-source voltage. The updated model is tested on flip-flop circuit by an advanced algorithm.

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2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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