{"title":"金辅助金属有机化学气相沉积法生长n掺杂砷化镓纳米线:n型掺杂剂通量速率的影响","authors":"Jing-Wei Guo, Hui Huang, Minjia Liu, X. Ren, Shiwei Cai, Wen Wang, Qi Wang, Yongqing Huang, Xia Zhang","doi":"10.1117/12.888518","DOIUrl":null,"url":null,"abstract":"N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.","PeriodicalId":179447,"journal":{"name":"SPIE/OSA/IEEE Asia Communications and Photonics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants\",\"authors\":\"Jing-Wei Guo, Hui Huang, Minjia Liu, X. Ren, Shiwei Cai, Wen Wang, Qi Wang, Yongqing Huang, Xia Zhang\",\"doi\":\"10.1117/12.888518\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.\",\"PeriodicalId\":179447,\"journal\":{\"name\":\"SPIE/OSA/IEEE Asia Communications and Photonics\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE/OSA/IEEE Asia Communications and Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888518\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE/OSA/IEEE Asia Communications and Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888518","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants
N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.