石墨烯基MOSFET的设计及其与广义MOSFET的比较

2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET) Pub Date : 2018-12-01 DOI:10.1109/ICCSDET.2018.8821087

Anant H. Gambhir, Deepashree M. Bhalerao

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引用次数: 1

摘要

石墨烯是半金属，是碳的同素异形体。它是电子和纳米技术领域的新兴材料。本文对石墨烯材料的MOSFET进行了设计和分析。本研究的目的是比较石墨烯基MOSFET和广义MOSFET的直流特性、击穿特性和小信号分析。以上分析是为了突出石墨烯相对于硅材料的优势。与硅相比，石墨烯具有更高的电子迁移率、更高的电流能力、更低的导通电压和更低的密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Designing of Graphene Based MOSFET and Comparison of it with Generalized MOSFET

Graphene is semi-metal and an allotrope of carbon. It is emerging material in field of electronics and nanotechnology. In this paper, designing of MOSFET with graphene material and its analysis is done. The aim of this work is to compare DC characteristics, breakdown characteristics and small signal analysis of graphene based MOSFET with generalized MOSFET. Above analysis are done to highlight the benefits of graphene over Silicon material. Graphene gives higher electron mobility, higher current capability, less break-over voltage and is having less density as compared with silicon.

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2018 International Conference on Circuits and Systems in Digital Enterprise Technology (ICCSDET)

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