纳米尺度的动态相变

G. Kocsis, F. Márkus
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引用次数: 0

摘要

在纳米尺度上,由于量子效应在电荷和热载体的传播中起作用,物质的许多输运特性与宏观的输运特性不同。大量的研究揭示了载流子的独特输运行为,然而,新的研究表明,热载子(即声子)也受到新的输运现象的影响。在研究中,我们估计了Anderson和Tamma提出的双相位滞后模型的可能传播模式,该模型对热载子在纳米硅层中的传播有附加的边界效应。此外,如果考虑到导热系数对尺寸的依赖(通过克努森数),则A-T模型沿众所周知的扩散行为预测新的弹道输运模式。我们能够从理论上证实纳米级系统中热载体的新输运模式的存在。这些结果不仅从物理角度来看很重要,而且可以为材料的加热和冷却至关重要的几个技术发展奠定基础(例如微处理器)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dynamical phase transitions on nanoscale
On nanoscale, many transport characteristics of the matter differ from the macroscopic ones as quantum effects play role in the propagation of charge and heat carriers. Extensive research had been conducted to reveal the distinct transport behaviour for charge carriers, however, novel investigations have shown that heat carriers (i.e. phonons) are also subject to new transport phenomena. In the study, we estimated possible propagation modes for the dual phase lag model proposed by Anderson and Tamma with additional boundary effects on propagation of heat carriers in a nanoscale silicon layer. Furthermore, if the heat conductivity coefficient's dependence of size (via Knudsen-number) is taken into consideration then the A-T model predicts new ballistic transport mode along the well-known diffusive behaviour. We were able to confirm the existence of new transport modes for heat carriers in nanoscale systems theoretically. The results are not only important from a physical perspective but can be a ground for several technical developments where heating and cooling of the material is crucial (e.g. microprocessors).
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