用于5G应用的ka波段MMIC低噪声放大器的设计

2021 8th NAFOSTED Conference on Information and Computer Science (NICS) Pub Date : 2021-12-21 DOI:10.1109/NICS54270.2021.9701480

Ngoc Nguyen Xuan, Hoang Nguyen Huy, Manh Luong Duy

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引用次数: 1

摘要

本文提出了一种采用台湾WIN半导体公司的NP2500MS晶体管0.25 pm AlGaN/ GaN HEMT技术的低噪声放大器的设计方案，该放大器的中心频率为25.8 GHz，这是第五代移动通信和其他一些K/ ka波段应用所使用的频段。使用该晶体管，LNA在整个带宽内的噪声系数小于1.65 dB，平均增益为13 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a Ka-band MMIC Low Noise Amplifier for 5G applications

In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.

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2021 8th NAFOSTED Conference on Information and Computer Science (NICS)

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