抗辐射连续逼近寄存器模数转换器

S. Jhung, K. Ko, Minju M. Lee, Seungryong Cho, G. Cho, Inyong Kwon
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引用次数: 1

摘要

在过去的几十年里,设计防辐射技术不断发展,以满足辐射环境的要求;然而,发生严重核事故的可能性仍然存在。为了预防和准备极端事件,需要在恶劣条件下可靠的先进电路设计。逐次逼近寄存器(SAR)模数转换器(ADC)与其他类型的ADC相比,具有功耗低、结构简单等优点。针对非线性问题的各种校准方案正在减小电容器的尺寸。主要目的是通过优化mosfet的尺寸来设计在辐射环境下保持性能的SAR ADC。在会议报告中,提出的逐次逼近寄存器模拟到数字转换器的尺寸优化和鲁棒辐射器件的布局将与初步的仿真结果进行讨论。电路的一般方面保持不变,只做了简单的修改,因此很容易适应辐射硬化应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation-hardened successive approximation register analog-to-digital converter
Radiation-hardened-by-design (RHBD) techniques have kept evolving for the past decades to satisfy the requirements of irradiating environments; however, the possibilities of severe nuclear accidents still remain. To prevent and be well prepared for extreme events, advanced circuit designs reliable under harsh conditions are necessary. Successive approximation register (SAR) analog-to-digital converter (ADC) has advantages in regards to low power consumption and simple structure compared to any other types of ADCs. Various schemes of calibration for nonlinearity issues are reducing capacitor sizes. The main purpose is to design SAR ADC that sustains performance under radiating environments by optimizing sizes of MOSFETs. In the conference presentation, the proposed Successive Approximation Register Analog to Digital Converter size optimizations and layout for robust-to radiation device will be discussed with initial simulation results. General aspects of the circuit are left unchanged, only simple modifications have been made, thus easily adaptable to radiation hardening applications.
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