{"title":"p型多孔GaAs衬底上生长CdS层带边发射特性的研究","authors":"A. Missaoui, L. Beji, M. Gaidi, A. Bouazizi","doi":"10.1109/ICTONMW.2007.4446972","DOIUrl":null,"url":null,"abstract":"We present the optical properties of sulphide cadmium (CdS) deposited, by vacuum evaporation technique, on porous p-type GaAs substrates with different porosities and compared to that deposited on glass and nominal p-type GaAs substrates. The CdS layer deposited on glass substrate exhibit average transmittance about 62% in the visible region and very sharp absorption edge at 495 nm. The room temperature band gap energy calculated from the transmittance spectra is about 2.5 eV. The surface roughness (rms) has been determined by atomic force microscopy (AFM). The photoluminescence (PL) and reflectance spectroscopy of the samples before and after deposition of CdS were measured to study the effect of the porosity on the luminescence properties of CdS/porous GaAs heterostructures.","PeriodicalId":366170,"journal":{"name":"2007 ICTON Mediterranean Winter Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Study of band-edge emission in CdS layers grown on |p-type porous GaAs substrates\",\"authors\":\"A. Missaoui, L. Beji, M. Gaidi, A. Bouazizi\",\"doi\":\"10.1109/ICTONMW.2007.4446972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the optical properties of sulphide cadmium (CdS) deposited, by vacuum evaporation technique, on porous p-type GaAs substrates with different porosities and compared to that deposited on glass and nominal p-type GaAs substrates. The CdS layer deposited on glass substrate exhibit average transmittance about 62% in the visible region and very sharp absorption edge at 495 nm. The room temperature band gap energy calculated from the transmittance spectra is about 2.5 eV. The surface roughness (rms) has been determined by atomic force microscopy (AFM). The photoluminescence (PL) and reflectance spectroscopy of the samples before and after deposition of CdS were measured to study the effect of the porosity on the luminescence properties of CdS/porous GaAs heterostructures.\",\"PeriodicalId\":366170,\"journal\":{\"name\":\"2007 ICTON Mediterranean Winter Conference\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 ICTON Mediterranean Winter Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTONMW.2007.4446972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 ICTON Mediterranean Winter Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTONMW.2007.4446972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of band-edge emission in CdS layers grown on |p-type porous GaAs substrates
We present the optical properties of sulphide cadmium (CdS) deposited, by vacuum evaporation technique, on porous p-type GaAs substrates with different porosities and compared to that deposited on glass and nominal p-type GaAs substrates. The CdS layer deposited on glass substrate exhibit average transmittance about 62% in the visible region and very sharp absorption edge at 495 nm. The room temperature band gap energy calculated from the transmittance spectra is about 2.5 eV. The surface roughness (rms) has been determined by atomic force microscopy (AFM). The photoluminescence (PL) and reflectance spectroscopy of the samples before and after deposition of CdS were measured to study the effect of the porosity on the luminescence properties of CdS/porous GaAs heterostructures.
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