利用基于电流的MOSFET模型设计射频CMOS低噪声放大器

Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784) Pub Date : 2004-09-04 DOI:10.1145/1016568.1016596

V. Baroncini, O. C. Gouveia-Filho

{"title":"利用基于电流的MOSFET模型设计射频CMOS低噪声放大器","authors":"V. Baroncini, O. C. Gouveia-Filho","doi":"10.1145/1016568.1016596","DOIUrl":null,"url":null,"abstract":"This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.","PeriodicalId":275811,"journal":{"name":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Design of RF CMOS low noise amplifiers using a current based MOSFET model\",\"authors\":\"V. Baroncini, O. C. Gouveia-Filho\",\"doi\":\"10.1145/1016568.1016596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.\",\"PeriodicalId\":275811,\"journal\":{\"name\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1016568.1016596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1016568.1016596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

本文提出了一种射频CMOS低噪声放大器的设计方法。该方法使用基于电流的MOSFET模型，可以对所有MOSFET反转区域的LNA进行详细分析。给出了MOS器件中包含感应栅噪声的设计方程，并给出了一个具有仿真结果的设计实例。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of RF CMOS low noise amplifiers using a current based MOSFET model

This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)

自引率

0.00%

发文量