AlGaAs的选择性氧化技术及应用

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-08-01 DOI:10.1109/SIM.1998.785109

K. Choquette, K. Geib, H. Hou, D. Mathes, R. Hull

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引用次数: 1

摘要

十年前由伊利诺伊大学首创的AlGaAs合金湿氧化技术，最近已被用于制造高性能垂直腔面发射激光器(VCSELs)。氧化受限VCSELs的优异性能激发了人们对湿式氧化基本原理的兴趣。本文简要介绍了III-V合金的选择性氧化技术，包括氧化物组织和氧化处理，并介绍了其在选择性氧化vcsel中的应用。

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The technology and applications of selective oxidation of AlGaAs

Wet oxidation of AlGaAs alloys, pioneered at the University of Illinois a decade ago, recently has been used to fabricate high performance vertical-cavity surface emitting lasers (VCSELs). The superior properties of oxide-confined VCSELs has stimulated interest in understanding the fundamentals of wet oxidation. We briefly review the technology of selective oxidation of III-V alloys, including the oxide microstructure and oxidation processing as well as describe its application to selectively oxidized VCSELs.

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来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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