准一维in /sub 0.77/Ga/sub 0.23/As/InP环中的量子输运

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328282

J. Appenzeller, T. Schapers, H. Hardtdegen, B. Lengeler, H. Luth

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引用次数: 0

摘要

我们在应变高迁移率的in /sub 0.77/Ga/sub 0.23/As/InP异质结构中制备了介观环，其中可以观察到由于Aharonov-Bohm效应引起的磁电阻周期振荡，尽管还没有得到环中只有一个模式的一维输运状态。研究了温度和电子过剩能量对相相干长度的影响，并用电子-电子散射事件的相破缺效应来解释。我们已经证明，具有低电子质量的InGaAs/InP非常适合用于基于电子干扰的器件。

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Quantum transport in quasi one-dimensional In/sub 0.77/Ga/sub 0.23/As/InP rings

We have fabricated mesoscopic rings in a strained high mobility In/sub 0.77/Ga/sub 0.23/As/InP heterostructure where periodic oscillations in the magnetoresistance due to the Aharonov-Bohm effect can be observed, although the one-dimensional transport regime with only one mode in the ring was not yet obtained. The influence of temperature and electron excess energy on the phase coherence length were investigated and could be explained by the phase breaking influence of electron-electron scattering events. We have shown that InGaAs/InP with its low electron mass is ideally suited for devices based on electron interference.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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