微波光子应用中基于inp的双极光电晶体管

C. Gonzalez
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引用次数: 1

摘要

快速光学探测器或光控微波器件是微波光子系统的关键元件。随着InP技术的发展和成熟,将高速器件、探测器和晶体管单片集成到光接收器中得到了蓬勃发展。为了制造一种具有固有增益和能够直接集成到光电单片集成电路(OEMIC)中的光电探测器,异质结双极光电晶体管(photohts)已经得到了广泛的研究,在本文中,我们将综述基于该器件的InP photohts和电路的最新性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
InP-based bipolar phototransistors for microwave photonic applications
Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.
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