{"title":"微波光子应用中基于inp的双极光电晶体管","authors":"C. Gonzalez","doi":"10.1109/MWP.2003.1422837","DOIUrl":null,"url":null,"abstract":"Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.","PeriodicalId":432014,"journal":{"name":"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"InP-based bipolar phototransistors for microwave photonic applications\",\"authors\":\"C. Gonzalez\",\"doi\":\"10.1109/MWP.2003.1422837\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.\",\"PeriodicalId\":432014,\"journal\":{\"name\":\"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWP.2003.1422837\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.2003.1422837","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP-based bipolar phototransistors for microwave photonic applications
Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.