先进的FinFET CMOS技术:tin栅极，翅片高度控制和非对称栅极绝缘体厚度4t -FinFET

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346953

Yongxun Liu, T. Matsukawa, K. Endo, M. Masahara, K. Ishii, S. O'Uchi, H. Yamauchi, J. Tsukada, Y. Ishikawa, E. Suzuki

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引用次数: 32

摘要

我们已经成功开发了先进的FinFET制造工艺，用于实现FinFET CMOS电路。利用上述技术，我们首次展示了具有优异传输性能的先进TiN金属栅极、翅片高度控制的FinFET CMOS逆变器，以及具有柔性阈值电压、非对称栅极绝缘体厚度的四端FinFET，其亚阈值(S)斜率大大提高

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Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time

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2006 International Electron Devices Meeting

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