在SOI平台上制备锗栅光电晶体管

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305933

V. Sorianello, G. De Angelis, A. De lacovo, L. Colace, S. Faralli, M. Romagnoli

{"title":"在SOI平台上制备锗栅光电晶体管","authors":"V. Sorianello, G. De Angelis, A. De lacovo, L. Colace, S. Faralli, M. Romagnoli","doi":"10.1109/GROUP4.2015.7305933","DOIUrl":null,"url":null,"abstract":"We report on the fabrication and characterization of a novel near infrared phototransistor provided with a germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Germanium gate phototransistor fabricated on SOI platform\",\"authors\":\"V. Sorianello, G. De Angelis, A. De lacovo, L. Colace, S. Faralli, M. Romagnoli\",\"doi\":\"10.1109/GROUP4.2015.7305933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the fabrication and characterization of a novel near infrared phototransistor provided with a germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一种新型近红外光电晶体管的制造和表征，该晶体管具有锗光栅，并通过市售硅光子代工厂制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Germanium gate phototransistor fabricated on SOI platform

We report on the fabrication and characterization of a novel near infrared phototransistor provided with a germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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