具有ALD WC/sub x/N/sub y/势垒的双damascene Cu互连的综合电迁移研究

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345666

C. Bruynseraede, A. Fischer, F. Ungar, J. Schumacher, V. Sutcliffe, J. Michelon, K. Maex

{"title":"具有ALD WC/sub x/N/sub y/势垒的双damascene Cu互连的综合电迁移研究","authors":"C. Bruynseraede, A. Fischer, F. Ungar, J. Schumacher, V. Sutcliffe, J. Michelon, K. Maex","doi":"10.1109/IITC.2004.1345666","DOIUrl":null,"url":null,"abstract":"Am important improvement in electromigration (EM) resistance was revealed upon the introduction of atomic-layer-deposited WCN barriers in dual-damascene Cu interconnects. At stress level EM failure were found to increase with WCN thickness and to be consistently superior compared to I-PVD deposited barriers. Although the voiding scenario is identical for both ALD and I-PVD barriers, a reduction of the current density exponent and the activation energy is observed for ALD. In contrast to the influence of WCN barrier thickness on the EM behaviour, the effect of specific pre-clean procedures prior to the ALD process turned out to the less pronounced.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comprehensive electromigration studies on dual-damascene Cu interconnects with ALD WC/sub x/N/sub y/ barriers\",\"authors\":\"C. Bruynseraede, A. Fischer, F. Ungar, J. Schumacher, V. Sutcliffe, J. Michelon, K. Maex\",\"doi\":\"10.1109/IITC.2004.1345666\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Am important improvement in electromigration (EM) resistance was revealed upon the introduction of atomic-layer-deposited WCN barriers in dual-damascene Cu interconnects. At stress level EM failure were found to increase with WCN thickness and to be consistently superior compared to I-PVD deposited barriers. Although the voiding scenario is identical for both ALD and I-PVD barriers, a reduction of the current density exponent and the activation energy is observed for ALD. In contrast to the influence of WCN barrier thickness on the EM behaviour, the effect of specific pre-clean procedures prior to the ALD process turned out to the less pronounced.\",\"PeriodicalId\":148010,\"journal\":{\"name\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2004.1345666\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在双大马士革铜互连中引入原子层沉积的WCN势垒后，电迁移(EM)电阻得到了重要改善。在应力水平下，EM破坏随着WCN厚度的增加而增加，并且始终优于I-PVD沉积的屏障。尽管ALD和I-PVD势垒的空化情况相同，但ALD的电流密度指数和活化能都有所降低。与WCN阻挡层厚度对EM行为的影响相反，ALD过程之前的特定预清洁程序的影响不太明显。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comprehensive electromigration studies on dual-damascene Cu interconnects with ALD WC/sub x/N/sub y/ barriers

Am important improvement in electromigration (EM) resistance was revealed upon the introduction of atomic-layer-deposited WCN barriers in dual-damascene Cu interconnects. At stress level EM failure were found to increase with WCN thickness and to be consistently superior compared to I-PVD deposited barriers. Although the voiding scenario is identical for both ALD and I-PVD barriers, a reduction of the current density exponent and the activation energy is observed for ALD. In contrast to the influence of WCN barrier thickness on the EM behaviour, the effect of specific pre-clean procedures prior to the ALD process turned out to the less pronounced.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

自引率

0.00%

发文量