电源设计的性能和可靠性

K. Shenai, P. Singh, S. Rao, D. Sorenson, K. Chu, G. Gaylon
{"title":"电源设计的性能和可靠性","authors":"K. Shenai, P. Singh, S. Rao, D. Sorenson, K. Chu, G. Gaylon","doi":"10.1109/NAECON.2000.894956","DOIUrl":null,"url":null,"abstract":"This paper presents the results obtained from a study conducted to evaluate the long-term operational reliability of dc-dc power converters used in computer and telecom applications. A full-bridge, phase-shifted zero voltage switching (ZVS) PWM converter was investigated experimentally and theoretically it is shown that under low-load conditions, the intrinsic body diode of the MOSFET undergoes dynamic avalanching during its reverse recovery with an associated high dv/dt. This phenomenon results in an excessive power loss in the circuit and increased switching stress for the MOSFET. The converter failure under low-load conditions can be associated with this mechanism as one of the potential causes. The paper also presents experimental results obtained on dc-dc power converter prototypes smeared with zinc whiskers. It is shown that power supply arcing under these conditions is a potential cause of failure.","PeriodicalId":171131,"journal":{"name":"Proceedings of the IEEE 2000 National Aerospace and Electronics Conference. NAECON 2000. Engineering Tomorrow (Cat. No.00CH37093)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Power supply design for performance and reliability\",\"authors\":\"K. Shenai, P. Singh, S. Rao, D. Sorenson, K. Chu, G. Gaylon\",\"doi\":\"10.1109/NAECON.2000.894956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the results obtained from a study conducted to evaluate the long-term operational reliability of dc-dc power converters used in computer and telecom applications. A full-bridge, phase-shifted zero voltage switching (ZVS) PWM converter was investigated experimentally and theoretically it is shown that under low-load conditions, the intrinsic body diode of the MOSFET undergoes dynamic avalanching during its reverse recovery with an associated high dv/dt. This phenomenon results in an excessive power loss in the circuit and increased switching stress for the MOSFET. The converter failure under low-load conditions can be associated with this mechanism as one of the potential causes. The paper also presents experimental results obtained on dc-dc power converter prototypes smeared with zinc whiskers. It is shown that power supply arcing under these conditions is a potential cause of failure.\",\"PeriodicalId\":171131,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 National Aerospace and Electronics Conference. NAECON 2000. Engineering Tomorrow (Cat. No.00CH37093)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 National Aerospace and Electronics Conference. NAECON 2000. Engineering Tomorrow (Cat. No.00CH37093)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAECON.2000.894956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 National Aerospace and Electronics Conference. NAECON 2000. Engineering Tomorrow (Cat. No.00CH37093)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2000.894956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

本文介绍了一项评估计算机和电信应用中使用的dc-dc电源变换器长期运行可靠性的研究结果。对全桥移相零电压开关(ZVS) PWM变换器进行了实验和理论研究,结果表明,在低负载条件下,MOSFET的本禀体二极管在反向恢复过程中会发生动态雪崩,并伴有较高的dv/dt。这种现象导致电路中功率损耗过大,并增加了MOSFET的开关应力。低负荷条件下的变流器故障可能与此机制有关,是潜在的原因之一。本文还介绍了涂锌晶须的直流-直流功率变换器样机的实验结果。结果表明,在这种情况下,电源电弧是导致故障的潜在原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power supply design for performance and reliability
This paper presents the results obtained from a study conducted to evaluate the long-term operational reliability of dc-dc power converters used in computer and telecom applications. A full-bridge, phase-shifted zero voltage switching (ZVS) PWM converter was investigated experimentally and theoretically it is shown that under low-load conditions, the intrinsic body diode of the MOSFET undergoes dynamic avalanching during its reverse recovery with an associated high dv/dt. This phenomenon results in an excessive power loss in the circuit and increased switching stress for the MOSFET. The converter failure under low-load conditions can be associated with this mechanism as one of the potential causes. The paper also presents experimental results obtained on dc-dc power converter prototypes smeared with zinc whiskers. It is shown that power supply arcing under these conditions is a potential cause of failure.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信