3σ温度系数为3.8 ppm/K的数字校正带隙基准电压

Hannes Badertscher, Armin Stocklin, Roman Willi, Andreas Fitzi, P. Zbinden
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引用次数: 4

摘要

Bangap电压参考(bgr)作为低温系数参考在当今的电路中被广泛使用。特别是测量电路和计量应用需要非常低的温度系数,以在整个温度范围内保持所需的精度。今天的BGR设计使用模拟电路来纠正导致温度漂移的影响。本文提出了一种采用数字校正技术的带隙参考电压。该设计包括一个测量当前芯片温度的温度传感器和一个由3位数字输入控制的带隙参考。使用数字校正算法计算带隙块的输入。该设计采用0.35 μm CMOS工艺,占地0.437 mm2。校准后,在-40°C至100°C的温度范围内实现3.8 ppm/K的3σ温度系数。采用所提出的设计,可以在大温度范围内进行高性能测量。数字化设计可以很容易地适应各种需求和温度系数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A digitally corrected bandgap voltage reference with a 3σ temperature coefficient of 3.8 ppm/K
Bangap voltage references (BGRs) are widely used in today's circuits as references with a low temperature coefficient. Especially measurement circuits and metering applications demand a very low temperature coefficient to maintain the desired precision over the entire temperature range. Today's BGR designs use analog circuits to correct for the effects which lead to a temperature drift. In this paper a bandgap reference voltage which uses a digital correction technique is presented. The proposed design includes a temperature sensor to measure the current chip temperature and a bandgap reference which is controllable by a 3-bit digital input. The input to the bandgap block is calculated using a digital correction algorithm. The proposed design was implemented in a 0.35 μm CMOS process and occupies 0.437 mm2. After calibration, a 3σ temperature coefficient of 3.8 ppm/K is achieved over a temperature range from -40°C to 100 °C. With the proposed design, high performance measurements over a large temperature range have become possible. The digital design allows for an easy adaptation to various needs and temperature coefficients.
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