等离子体充电对栅极电介质的损害——过去、现在和未来

K.P. Cheung
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引用次数: 1

摘要

等离子体充电对薄栅极介质的损伤是随着集成电路技术的发展而发展的。随着栅极介质变薄,其对电应力的敏感性发生了变化,电应力对器件和电路可靠性的影响也发生了变化。与此同时,生产中使用的等离子体系统也发生了变化。两者的卷积决定了等离子体充电损伤的严重程度,也决定了其表征方法。随着行业准备做出另一项重大改变,即采用高k栅极电介质,等离子体充电损伤的问题将不得不再次得到不同的处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Plasma charging damage to gate dielectric-past, present and future
Plasma charging damage to thin gate dielectric evolves with the integrated circuit technology. As gate dielectric thins down, its sensitivity to electrical stress changes, so are the impacts of such stress on device and circuit reliability. Concurrent to that change, is the change in plasma systems used in production. The convolution of the two determines the seriousness of plasma charging damage, as well as its methods of characterization. As the industry poise to make yet another major change, namely to high-k gate dielectric, the problem of plasma charging damage will have to be treated differently again.
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