{"title":"等离子体充电对栅极电介质的损害——过去、现在和未来","authors":"K.P. Cheung","doi":"10.1109/IPFA.2002.1025670","DOIUrl":null,"url":null,"abstract":"Plasma charging damage to thin gate dielectric evolves with the integrated circuit technology. As gate dielectric thins down, its sensitivity to electrical stress changes, so are the impacts of such stress on device and circuit reliability. Concurrent to that change, is the change in plasma systems used in production. The convolution of the two determines the seriousness of plasma charging damage, as well as its methods of characterization. As the industry poise to make yet another major change, namely to high-k gate dielectric, the problem of plasma charging damage will have to be treated differently again.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Plasma charging damage to gate dielectric-past, present and future\",\"authors\":\"K.P. Cheung\",\"doi\":\"10.1109/IPFA.2002.1025670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma charging damage to thin gate dielectric evolves with the integrated circuit technology. As gate dielectric thins down, its sensitivity to electrical stress changes, so are the impacts of such stress on device and circuit reliability. Concurrent to that change, is the change in plasma systems used in production. The convolution of the two determines the seriousness of plasma charging damage, as well as its methods of characterization. As the industry poise to make yet another major change, namely to high-k gate dielectric, the problem of plasma charging damage will have to be treated differently again.\",\"PeriodicalId\":328714,\"journal\":{\"name\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2002.1025670\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025670","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma charging damage to gate dielectric-past, present and future
Plasma charging damage to thin gate dielectric evolves with the integrated circuit technology. As gate dielectric thins down, its sensitivity to electrical stress changes, so are the impacts of such stress on device and circuit reliability. Concurrent to that change, is the change in plasma systems used in production. The convolution of the two determines the seriousness of plasma charging damage, as well as its methods of characterization. As the industry poise to make yet another major change, namely to high-k gate dielectric, the problem of plasma charging damage will have to be treated differently again.