基于v型双量子阱的HEMT结构的迁移率调制

2019 Devices for Integrated Circuit (DevIC) Pub Date : 2019-03-01 DOI:10.1109/DEVIC.2019.8783242

S. Palo, A. K. Panda, T. Sahu, N. Sahoo, T. C. Tripathy

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摘要

本文应用电场$\pmb{F}_{\pmb{e}}$，从具有v形电位的$\pmb{Al}_{x}\pmb{Ga}_{\mathit{1}-x}\pmb{As}$的双量子阱HEMT结构中，从理论上研究了低温迁移率$\mathbf{\mu}$的调制。我们发现，与传统的方形量子阱系统不同，在子带占位变化发生的过渡场，$\pmb{\mu}$有一个不寻常的上升。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mobility Modulation in V-shaped Double Quantum Well based HEMT Structure

In the present work, modulation of low temperature mobility $\mathbf{\mu}$ is studied theoretically with the application of electric field $\pmb{F}_{\pmb{e}}$ in a double quantum well HEMT structure whose channel is craved from $\pmb{Al}_{x}\pmb{Ga}_{\mathit{1}-x}\pmb{As}$ having V-shaped potential. We show that there is an unusual rise in $\pmb{\mu}$ at the transition field where the change in subband occupancy occurs, unlike that of the conventional square quantum well systems.

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2019 Devices for Integrated Circuit (DevIC)

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