面积节能的11位SAR ADC,具有延迟线增强调谐,用于神经传感应用

Teng-Chieh Huang, Po-Tsang Huang, Shang-Lin Wu, Kuan-Neng Chen, J. Chiou, Kuo-Hua Chen, C. Chiu, H. Tong, C. Chuang, W. Hwang
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引用次数: 5

摘要

本文提出了一种具有延迟线增强调谐的11位混合模数转换器(ADC),用于神经传感应用。为了减少总电容量,该混合ADC分别由3位延迟线ADC和8位连续逼近寄存器(SAR) ADC组成粗调和精调。基于延迟线的ADC通过修改游标结构来检测三个最高有效位。为了放宽粗调的精度要求,提出了基于提升的细调搜索算法和重比较程序。为了进一步达到节能的目的,在SAR ADC中采用了分裂电容阵列和自定时控制。采用台积电0.18μm CMOS工艺,以0.6μW的功耗和0.032 mm2的面积实现了8KS/s速率下10.4位的ENOB。该ADC的FoM为49.4fJ/转换步长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Area-power-efficient 11-bit SAR ADC with delay-line enhanced tuning for neural sensing applications
In this paper, an area-power-efficient 11-bit hybrid analog-to-digital converter (ADC) with delay-line enhanced tuning for neural sensing applications is presented. To reduce the total amount of capacitance, this hybrid ADC is composed of a coarse tune and a fine tune by 3-bit delay-lined-based ADC and 8-bit successive approximation register (SAR) ADC, respectively. The delay-lined-based ADC is designed to detect the three most significant bits by a modified vernier structure. To relax the accuracy requirement of the coarse tune, the lifting-based searching algorithm and re-comparison procedure are proposed for the fine tune. To further achieve energy saving, split capacitor array and self-timed control are utilized in the SAR ADC. Fabricated in TSMC 0.18μm CMOS technology, an ENOB of 10.4-bit at 8KS/s can be achieved with only 0.6μW power consumption and 0.032-mm2 area. The FoM of this ADC is 49.4fJ/conversion-step.
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