J. Vaillancourt, Xuejun Lu, Xuliang Han, D. Janzen, W. Shih
{"title":"高速透明柔性电子器件","authors":"J. Vaillancourt, Xuejun Lu, Xuliang Han, D. Janzen, W. Shih","doi":"10.1117/12.777348","DOIUrl":null,"url":null,"abstract":"A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput.","PeriodicalId":133868,"journal":{"name":"SPIE Defense + Commercial Sensing","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-speed transparent flexible electronics\",\"authors\":\"J. Vaillancourt, Xuejun Lu, Xuliang Han, D. Janzen, W. Shih\",\"doi\":\"10.1117/12.777348\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput.\",\"PeriodicalId\":133868,\"journal\":{\"name\":\"SPIE Defense + Commercial Sensing\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Defense + Commercial Sensing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.777348\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Defense + Commercial Sensing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.777348","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-speed flexible transistor made with an ultrapure carbon nanotube (CNT) solution is reported. The carrier transport layer of the CNT-based flexible transistor is formed at room temperature by dispensing a tiny droplet of an electronics-grade CNT solution. Ultra high field-effect mobility of ~ 48,000 cm2/(V×s) has been demonstrated on a thin-film field effect transistor (TFT). A simple trans-impedance voltage follower circuit was made using the CNT-TFT on a transparency film. The circuit exhibited a high modulation speed of 312 MHz and a large current-carrying capacity beyond 20 mA. The transparency and the sheet resistance of the CNT-film were also characterized at different wavelengths. The ink-jet printing-compatible process would enable mass production of large-area electronic circuits on virtually any desired flexible substrate at low cost and high throughput.
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