{"title":"基于Multisim软件的二极管特性测试","authors":"M. Djalal, R. Rahmat","doi":"10.33387/protk.v7i1.1213","DOIUrl":null,"url":null,"abstract":"In this study, a diode characteristic testing will be conducted, namely the characteristics of forward bias and reverse bias using Multisim software. Diode components are mostly applied to electronic circuits, so a simulation is needed to determine the performance of the diode before it is applied to the circuit. The test to be carried out this time includes making a forward bias circuit and back bias on a diode, describing the characteristics of the diode, determining the diode's working point for a particular condition, and determining dc diode resistance in the forward bias and reverse bias. From the results of testing the forward bias characteristic, it can be seen that the silicon diode IN 4001 in forward bias increases the small current until the diode voltage (Vd) reaches its knee voltage (Vk) around 0.6 V - 0.7 V. After going through knee stress (Vk), then the increase in large currents. The workings of diodes like this can be said as diodes with deviant or biased currents. Whereas the reverse bias current is almost constant (almost close to zero) even though the voltage is increased continuously until it reaches a voltage of 50 V. How it works like this is called a diode with reverse current.","PeriodicalId":351870,"journal":{"name":"PROtek : Jurnal Ilmiah Teknik Elektro","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characteristic Test of Diode Based Multisim Software\",\"authors\":\"M. Djalal, R. Rahmat\",\"doi\":\"10.33387/protk.v7i1.1213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a diode characteristic testing will be conducted, namely the characteristics of forward bias and reverse bias using Multisim software. Diode components are mostly applied to electronic circuits, so a simulation is needed to determine the performance of the diode before it is applied to the circuit. The test to be carried out this time includes making a forward bias circuit and back bias on a diode, describing the characteristics of the diode, determining the diode's working point for a particular condition, and determining dc diode resistance in the forward bias and reverse bias. From the results of testing the forward bias characteristic, it can be seen that the silicon diode IN 4001 in forward bias increases the small current until the diode voltage (Vd) reaches its knee voltage (Vk) around 0.6 V - 0.7 V. After going through knee stress (Vk), then the increase in large currents. The workings of diodes like this can be said as diodes with deviant or biased currents. Whereas the reverse bias current is almost constant (almost close to zero) even though the voltage is increased continuously until it reaches a voltage of 50 V. How it works like this is called a diode with reverse current.\",\"PeriodicalId\":351870,\"journal\":{\"name\":\"PROtek : Jurnal Ilmiah Teknik Elektro\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PROtek : Jurnal Ilmiah Teknik Elektro\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.33387/protk.v7i1.1213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PROtek : Jurnal Ilmiah Teknik Elektro","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33387/protk.v7i1.1213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在本研究中,将使用Multisim软件对二极管进行特性测试,即正向偏置和反向偏置的特性。二极管元件大多应用于电子电路中,因此在二极管应用于电路之前,需要对其进行仿真以确定其性能。这次要进行的测试包括在二极管上制作正向偏置电路和反向偏置,描述二极管的特性,确定二极管在特定条件下的工作点,确定直流二极管在正向偏置和反向偏置下的电阻。从测试正偏特性的结果可以看出,正偏置的硅二极管IN 4001增加了小电流,直到二极管电压(Vd)达到其膝电压(Vk)在0.6 V - 0.7 V左右。经过膝关节应力(Vk)后,再增加大电流。像这样的二极管的工作可以被称为具有偏差或偏置电流的二极管。而反向偏置电流几乎是恒定的(几乎接近于零),即使电压不断增加,直到达到50 V的电压。它的工作原理叫做反向电流二极管。
Characteristic Test of Diode Based Multisim Software
In this study, a diode characteristic testing will be conducted, namely the characteristics of forward bias and reverse bias using Multisim software. Diode components are mostly applied to electronic circuits, so a simulation is needed to determine the performance of the diode before it is applied to the circuit. The test to be carried out this time includes making a forward bias circuit and back bias on a diode, describing the characteristics of the diode, determining the diode's working point for a particular condition, and determining dc diode resistance in the forward bias and reverse bias. From the results of testing the forward bias characteristic, it can be seen that the silicon diode IN 4001 in forward bias increases the small current until the diode voltage (Vd) reaches its knee voltage (Vk) around 0.6 V - 0.7 V. After going through knee stress (Vk), then the increase in large currents. The workings of diodes like this can be said as diodes with deviant or biased currents. Whereas the reverse bias current is almost constant (almost close to zero) even though the voltage is increased continuously until it reaches a voltage of 50 V. How it works like this is called a diode with reverse current.