CMOS差分移噪柯氏压控振荡器

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.993045

R. Aparicio, A. Hajimiri

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引用次数: 46

摘要

一个0.35 /spl mu/m的压控振荡器使用电流开关来增加电压摆幅，通过循环平稳噪声校准降低相位噪声，提高启动可靠性。采用3金属、0.35 /spl mu/m工艺的CMOS压控振荡器在1.8 GHz载波的3 MHz偏移时具有-139 dBc/Hz的相位噪声，并且使用Q为6 mA和4 mA直流电流的电感进行30%的连续调谐。

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A CMOS differential noise-shifting Colpitts VCO

A 0.35 /spl mu/m VCO uses current switching to increase voltage swing, lower phase noise by cyclostationary noise alignment, and improve startup reliability. A CMOS VCO in a 3-metal, 0.35 /spl mu/m process has -139 dBc/Hz phase noise at 3 MHz offset from a 1.8 GHz carrier and 30% of continuous tuning using inductors with Q of 6 and 4 mA dc current.

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来源期刊

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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