{"title":"利用基于开关的有源器件模型设计并实现了效率为79%的反f类功率放大器","authors":"Pouya Aflaki, Renato Negra, F. Ghannouchi","doi":"10.1109/RWS.2008.4463519","DOIUrl":null,"url":null,"abstract":"This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79%, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.","PeriodicalId":431471,"journal":{"name":"2008 IEEE Radio and Wireless Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device model\",\"authors\":\"Pouya Aflaki, Renato Negra, F. Ghannouchi\",\"doi\":\"10.1109/RWS.2008.4463519\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79%, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.\",\"PeriodicalId\":431471,\"journal\":{\"name\":\"2008 IEEE Radio and Wireless Symposium\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio and Wireless Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2008.4463519\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio and Wireless Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2008.4463519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device model
This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79%, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
