双栅finfet扩展电阻的解析估计模型

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188945

C. Malheiro, A. S. N. Pereira, R. Giacomini

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引用次数: 4

摘要

FinFET的扩散电阻是FinFET寄生电阻的组成部分，它是由靠近结的漏极和源极区域电流线的弯曲形状引起的。这项工作提出了一个非常简单的分析模型，用于双栅finfet的扩展电阻，该模型适用于从16nm到16nm的任何鳍宽，不需要拟合参数。将模型输出与从数值模拟中提取的数据进行了比较，结果表明，在考虑的三种不同掺杂浓度的器件范围内，模型输出的准确性优于8%。

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An analytical estimation model for the spreading resistance of Double-Gate FinFETs

The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.

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2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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