电子束辐照声子晶体中LiNbO3的畴反转

M. B. Assouar, B. Vincent, H. Moubchir, O. Elmazria, A. Khelif, V. Laude
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引用次数: 1

摘要

我们在此报告了电子束辐照在铌酸锂(z-cut)中无任何湿法蚀刻相关的静态偏置的畴反转研究,以制备声子晶体。利用z+面和z-面蚀刻速率差异较大的特点,利用高频蚀刻技术可以显示出倒畴。确定并优化了辐照条件的选择,如加速电压、探针电流和注入剂量(对获得的区域的几何形状和大小感兴趣的参数)。然后在z形切割LiNbO3上实现了微米尺度的二维结构。我们演示了8微米直径六边形的实现,深度非常大,接近30微米,这取决于蚀刻时间。在蚀刻前用光学显微镜观察所得结构的倒畴,蚀刻后用场发射扫描电镜对所得结构进行表征。这些特征表明了获得的结构的高入住率。对所实现的声子结构带隙的数值模拟表明,在200 MHz左右存在一个频带隙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Domains Inversion in LiNbO3 Using Electron Beam Irradiation for Phononic Crystals
We report here, the study of domain inversion in lithium niobate (z-cut) by electron beam irradiation without any static bias associated to wet etching, in view of the fabrication of phononic crystals. The inverted domains are revealed by HF-etching taking advantage of the large difference in etching rate between z+ and z-faces. A pertinent choice of irradiation conditions such as accelerating voltage, probe current and injected dose, (parameters of interest for the geometry and size of the obtained domains), was determined and optimized. Two dimensional structures at the micrometer scale were then realized on z-cut LiNbO3. We demonstrate the achievement of 8 mum diameter hexagons, with a very large depth close to 30 mum, which depends on the etching time. The obtained structures were characterized before etching by optical microscopy to visualize the inverted domains, and after etching by field emission scanning electron microscopy. These characterisations pointed out the high occupancy rate of obtained structures. Numerical simulations of the realized phononic structure band gap show a frequency band gap around 200 MHz.
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