{"title":"铜/低钾技术的物理失效分析技术","authors":"Huixian Wu, B. Hooghan, J. Cargo","doi":"10.1109/IPFA.2003.1222763","DOIUrl":null,"url":null,"abstract":"In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and combination of these techniques. For the cross-section analysis of copper/low k samples, focused ion beam and mechanical polishing techniques have been developed and studied. Failure Analysis (FA) challenges and new failure modes, reliability issues will also be addressed.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physical Failure Analysis techniques for Cu/low k technology\",\"authors\":\"Huixian Wu, B. Hooghan, J. Cargo\",\"doi\":\"10.1109/IPFA.2003.1222763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and combination of these techniques. For the cross-section analysis of copper/low k samples, focused ion beam and mechanical polishing techniques have been developed and studied. Failure Analysis (FA) challenges and new failure modes, reliability issues will also be addressed.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical Failure Analysis techniques for Cu/low k technology
In this work, physical FA techniques including deprocessing and cross section analysis have been developed and applied to Cu/low k technology. Deprocessing techniques discussed include: wet chemical etching, reactive ion etching (RIE), parallel polishing, chemical mechanical polishing (CMP) and combination of these techniques. For the cross-section analysis of copper/low k samples, focused ion beam and mechanical polishing techniques have been developed and studied. Failure Analysis (FA) challenges and new failure modes, reliability issues will also be addressed.