硅辐照界面的实验研究

Min Raj Lamsal
{"title":"硅辐照界面的实验研究","authors":"Min Raj Lamsal","doi":"10.3126/hp.v9i01.40171","DOIUrl":null,"url":null,"abstract":"Atomic Force Microscopic (AFM) studies of Mega electron-volt (MeV) ions irradiated silicon surface morphology has been studied to a fluence of 5 x 108 ions/cm2. Interesting features of cracks of 50 nm in depth and 100 nm in width have been observed on the irradiated surface. The features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface. The observed feature of crack seems to be mainly due to the high electronic energy loss of the irradiated ions on the surface that induces the stress in it. It confirms that the coarseness of the microstructure of a material directly affect the mechanical properties.","PeriodicalId":285487,"journal":{"name":"Himalayan Physics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Experimental Study on Irradiated Interface of Silicon\",\"authors\":\"Min Raj Lamsal\",\"doi\":\"10.3126/hp.v9i01.40171\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atomic Force Microscopic (AFM) studies of Mega electron-volt (MeV) ions irradiated silicon surface morphology has been studied to a fluence of 5 x 108 ions/cm2. Interesting features of cracks of 50 nm in depth and 100 nm in width have been observed on the irradiated surface. The features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface. The observed feature of crack seems to be mainly due to the high electronic energy loss of the irradiated ions on the surface that induces the stress in it. It confirms that the coarseness of the microstructure of a material directly affect the mechanical properties.\",\"PeriodicalId\":285487,\"journal\":{\"name\":\"Himalayan Physics\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Himalayan Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3126/hp.v9i01.40171\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Himalayan Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3126/hp.v9i01.40171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

原子力显微镜(AFM)研究了兆兆电子伏特(MeV)离子辐照硅表面形貌的影响,影响到5 × 108个离子/cm2。在辐照表面上观察到深度为50 nm,宽度为100 nm的裂纹的有趣特征。这些特征似乎是由靶表面辐照区域的辐照诱导应力引起的。观察到的裂纹特征似乎主要是由于辐照离子在表面上的高电子能量损失引起了裂纹中的应力。这证实了材料微观结构的粗糙程度直接影响材料的力学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Experimental Study on Irradiated Interface of Silicon
Atomic Force Microscopic (AFM) studies of Mega electron-volt (MeV) ions irradiated silicon surface morphology has been studied to a fluence of 5 x 108 ions/cm2. Interesting features of cracks of 50 nm in depth and 100 nm in width have been observed on the irradiated surface. The features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface. The observed feature of crack seems to be mainly due to the high electronic energy loss of the irradiated ions on the surface that induces the stress in it. It confirms that the coarseness of the microstructure of a material directly affect the mechanical properties.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信