快速热氮化氧化物和去耦等离子体氮化氧化物的等离子体充电损伤免疫

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003 Pub Date : 2003-07-07 DOI:10.1109/IPFA.2003.1222754

D. Chong, W. Yoo, C. Lek

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引用次数: 0

摘要

研究了等离子体过程对快速热氮化氧化物(RTNO)和去耦等离子体氮化氧化物(DPNO)栅极电介质的损伤。结果发现，血浆诱导的DPNO损伤水平与RTNO相当。因此，我们可以得出结论，去耦等离子体氮化(DPN)过程不会对二氧化硅栅极介质造成明显的损伤。我们还发现，当两种栅极介质都受到模拟等离子体充电应力时，RTNO在等离子体充电损伤免疫方面优于DPNO。

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Plasma charging damage immunities of rapid thermal nitrided oxide and decoupled plasma nitrided oxide

Plasma process induced damage on rapid thermal nitrided oxide (RTNO) and decoupled plasma nitrided oxide (DPNO) gate dielectrics are evaluated. It is found that the level of plasma induced damage on DPNO is comparable to that of RTNO. Hence, we can conclude that the decoupled plasma nitridation (DPN) process does not introduce significant damage to the silicon dioxide gate dielectric. We also discovered that RTNO fares better than DPNO in term of plasma charging damage immunity when both gate dielectrics are subjected to simulated plasma charging stresses.

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Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003

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