IGBT (COMFET)晶体管的短路性能

Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting Pub Date : 1988-10-02 DOI:10.1109/IAS.1988.25125

T. Rogne, N.A. Ringheim, B. Odegard, J. Eskedal, T. Undeland

{"title":"IGBT (COMFET)晶体管的短路性能","authors":"T. Rogne, N.A. Ringheim, B. Odegard, J. Eskedal, T. Undeland","doi":"10.1109/IAS.1988.25125","DOIUrl":null,"url":null,"abstract":"The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability. The high-current level or active region is found for different IGBTs. The short-circuit endurance time is investigated. The measurements show clear differences between the IGBTs from different manufacturers. The gate voltage is shown to be an important parameter.<<ETX>>","PeriodicalId":274766,"journal":{"name":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Short-circuit capability of IGBT (COMFET) transistors\",\"authors\":\"T. Rogne, N.A. Ringheim, B. Odegard, J. Eskedal, T. Undeland\",\"doi\":\"10.1109/IAS.1988.25125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability. The high-current level or active region is found for different IGBTs. The short-circuit endurance time is investigated. The measurements show clear differences between the IGBTs from different manufacturers. The gate voltage is shown to be an important parameter.<<ETX>>\",\"PeriodicalId\":274766,\"journal\":{\"name\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1988.25125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1988.25125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

IGBT(绝缘栅双极晶体管)或COMFET(电导率调制场效应晶体管)具有与mosfet相同的低驱动要求和与双极晶体管相同的载流子注入，即使在高击穿电压额定值下也能提供低电压降。对其短路性能进行了研究。在不同的igbt中发现了高电流电平或有源区域。研究了短路持久时间。测量结果显示，不同制造商生产的igbt之间存在明显差异。栅极电压是一个重要的参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Short-circuit capability of IGBT (COMFET) transistors

The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability. The high-current level or active region is found for different IGBTs. The short-circuit endurance time is investigated. The measurements show clear differences between the IGBTs from different manufacturers. The gate voltage is shown to be an important parameter.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting

自引率

0.00%

发文量