300mm铜低k集成度和可靠性，适用于90和65纳米节点

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345684

S. Parikh, M. Naik, R. Hung, H. Dai, D. Padhi, L. Zhang, T. Pan, Kuo-Wei Liu, G. Dixit, M. Armacost

{"title":"300mm铜低k集成度和可靠性，适用于90和65纳米节点","authors":"S. Parikh, M. Naik, R. Hung, H. Dai, D. Padhi, L. Zhang, T. Pan, Kuo-Wei Liu, G. Dixit, M. Armacost","doi":"10.1109/IITC.2004.1345684","DOIUrl":null,"url":null,"abstract":"The paper addresses critical issues associated with 90 and 65 nm copper low k interconnects. A stable baseline with >98% yield on 1E7via and 5m long serpent was established. Electromigration (EM) and IV breakdown performance was improved by optimizing the post CMP Cu pre-treatment and the dielectric barrier obtaining EM T/sub 0.1/ lifetime of greater than 10 yrs at 1.5 MA/cm/sup 2/ and >6MV/cm IV breakdown field. Detailed characterization of the impact of the barrier process on stress migration (SM) is presented. Extendibility of the process flow to sub-90nm interconnects and advanced dielectric (k<2.7) is shown.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"300mm copper low-k integration and reliability for 90 and 65 nm nodes\",\"authors\":\"S. Parikh, M. Naik, R. Hung, H. Dai, D. Padhi, L. Zhang, T. Pan, Kuo-Wei Liu, G. Dixit, M. Armacost\",\"doi\":\"10.1109/IITC.2004.1345684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper addresses critical issues associated with 90 and 65 nm copper low k interconnects. A stable baseline with >98% yield on 1E7via and 5m long serpent was established. Electromigration (EM) and IV breakdown performance was improved by optimizing the post CMP Cu pre-treatment and the dielectric barrier obtaining EM T/sub 0.1/ lifetime of greater than 10 yrs at 1.5 MA/cm/sup 2/ and >6MV/cm IV breakdown field. Detailed characterization of the impact of the barrier process on stress migration (SM) is presented. Extendibility of the process flow to sub-90nm interconnects and advanced dielectric (k<2.7) is shown.\",\"PeriodicalId\":148010,\"journal\":{\"name\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2004.1345684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文解决了与90 nm和65 nm铜低k互连相关的关键问题。建立了1E7via和5m长蛇条产量>98%的稳定基线。通过优化CMP后Cu预处理和介质阻挡层，在1.5 MA/cm/sup 2/和>6MV/cm的IV击穿场下，获得了EM T/sub 0.1/寿命大于10年的电迁移(EM)和IV击穿性能。详细描述了屏障过程对应力迁移(SM)的影响。该工艺流程可扩展到90nm以下的互连和高级介电(k<2.7)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

300mm copper low-k integration and reliability for 90 and 65 nm nodes

The paper addresses critical issues associated with 90 and 65 nm copper low k interconnects. A stable baseline with >98% yield on 1E7via and 5m long serpent was established. Electromigration (EM) and IV breakdown performance was improved by optimizing the post CMP Cu pre-treatment and the dielectric barrier obtaining EM T/sub 0.1/ lifetime of greater than 10 yrs at 1.5 MA/cm/sup 2/ and >6MV/cm IV breakdown field. Detailed characterization of the impact of the barrier process on stress migration (SM) is presented. Extendibility of the process flow to sub-90nm interconnects and advanced dielectric (k<2.7) is shown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

自引率

0.00%

发文量