栅极全能多晶硅纳米线晶体管中四电平随机电报噪声的表征

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782974

You-Tai Chang, Pei-Wen Li, Horng-Chih Lin

{"title":"栅极全能多晶硅纳米线晶体管中四电平随机电报噪声的表征","authors":"You-Tai Chang, Pei-Wen Li, Horng-Chih Lin","doi":"10.23919/SNW.2019.8782974","DOIUrl":null,"url":null,"abstract":"Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor\",\"authors\":\"You-Tai Chang, Pei-Wen Li, Horng-Chih Lin\",\"doi\":\"10.23919/SNW.2019.8782974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了由两个离散陷阱诱导的栅极全能(GAA)多晶硅无结(JL)纳米线(NW)晶体管的四电平随机电报噪声(RTN)特性。通过仔细分析RTN，可以分别确定栅极氧化物中两个陷阱的深度。通过评估不同层次之间转换的概率获得一致的信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor

Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 Silicon Nanoelectronics Workshop (SNW)

自引率

0.00%

发文量