(111)方向上量子点的电子结构

2009 Asia Communications and Photonics conference and Exhibition (ACP) Pub Date : 2010-02-02 DOI:10.1364/ACP.2009.FW2

Zhao Wei, Yuan ZhongYuan, L. Yumin

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摘要

本文给出了InAs/GaAs量子点在(111)方向上的电子结构。采用立方量子点和截断金字塔形量子点。通过求解包含应变修正约束势和压电效应的三维有效质量Shrödinger方程来计算电子能级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electronic structure of quantum dots in (111) direction

This paper presents electronic structure of InAs/GaAs quantum dots in (111) direction. The cubic and truncated pyramidal shaped quantum dots are adopted. The electronic energy levels are calculated by solving a three-dimensional effective mass Shrödinger equation including a strain modified confinement potential and piezoelectric effects.

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2009 Asia Communications and Photonics conference and Exhibition (ACP)

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