基于CMOS晶体管的高频忆阻器仿真电路设计

Naheem Olakunle Adesina, Md Azmot Ullah Khan, Jian Xu
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引用次数: 0

摘要

近年来,忆阻器由于其在模拟和数字电路、计算机体系结构、纳米存储、逻辑、神经形态和振荡器电路中的潜在应用而受到广泛关注。然而,市场上没有单一的元件或设备表现出记忆行为。介绍了忆阻器仿真电路,用于模拟真实忆阻器的行为和性能。在这项工作中,我们提出了一种基于晶体管的忆阻器仿真电路,该电路采用TSMC 0.18µm n阱CMOS工艺技术设计,电源电压为1.8 V。仿真结果表明,该仿真电路可以在180 mV的低输入电压下切换,其电流-电压特性在15 MHz ~ 100 MHz范围内产生箝位滞回,适合于高频应用。其布局占用54µm X 51µm的芯片面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS Transistor-Based Memristor Emulator Circuit Design for High Frequency Applications
In recent time, memristor is gaining widespread attention owing to its potential applications in analog and digital circuits, computer architectures, nano-dimension memories, logic, neuromorphic, and oscillator circuits. However, there is no single component or device available in the market that exhibit memristive behavior. Memristor emulator circuit is introduced to mimic the behavior of a real memristor and emulate its properties. In this work, we propose a transistor-based memristor emulator circuit, which is designed in TSMC 0.18 µm n-well CMOS process technology with a supply voltage of 1.8 V. The results show that the proposed emulator circuit can be switched with a low input voltage of 180 mV and its current-voltage characteristics produces pinched hysteresis loops in the range 15 MHz to 100 MHz, which makes the emulator suitable for high frequency applications. In addition, its layout occupies chip area of 54 µm X 51 µm.
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