(110)取向超薄体单栅和双栅SOI mosfet的迁移率增强

2006 International Workshop on Nano CMOS Pub Date : 1900-01-01 DOI:10.1109/IWNC.2006.4570977

T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya

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引用次数: 2

摘要

在(110)超薄体SOI mosfet中实验证明了电子和空穴的迁移率增强。并对单门操作和双门操作进行了比较。单门操作中空穴迁移率的增强是通过抑制声子散射来实现的，而双门操作中电子迁移率的增强是通过体积反转来实现的。在实验结果的基础上，讨论了未来实现最高CMOS电路性能的最佳器件结构。

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Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

Mobility enhancement of both electron and hole is experimentally demonstrated in (110) ultra-thin-body SOI MOSFETs. Single-gate operation and double-gate operation are also compared. Hole mobility enhancement in the single-gate operation is achieved by the suppression of phonon scattering, while electron mobility enhancement in double-gate operation is achieved by volume inversion. Based on the experimental results, the best device structure for highest CMOS circuit performance in future has been discussed.

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2006 International Workshop on Nano CMOS

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