半导体器件的可靠性-模拟的需要

W. Kanert
{"title":"半导体器件的可靠性-模拟的需要","authors":"W. Kanert","doi":"10.1109/ESIME.2011.5765861","DOIUrl":null,"url":null,"abstract":"Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates. Understanding of the device behaviour together with physical modelling is indispensable. Simulation plays a key role in this undertaking.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability of semiconductor devices - The need for simulation\",\"authors\":\"W. Kanert\",\"doi\":\"10.1109/ESIME.2011.5765861\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates. Understanding of the device behaviour together with physical modelling is indispensable. Simulation plays a key role in this undertaking.\",\"PeriodicalId\":115489,\"journal\":{\"name\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2011.5765861\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESIME.2011.5765861","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在过去的几年中,对半导体器件的可靠性要求大大增加。然而,产品鉴定仍然由标准的压力测试程序主导。尽管最近讨论了改进的方法,但是单独的测试不足以证明非常低的故障率。理解设备的行为和物理建模是必不可少的。仿真在这项工作中起着关键作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability of semiconductor devices - The need for simulation
Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates. Understanding of the device behaviour together with physical modelling is indispensable. Simulation plays a key role in this undertaking.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信