Bo-huei Liao, C. Hsiao, M. Shiao, Shih-Hao Chan, Sheng-Hui Chen, Sheng-De Weng
{"title":"HIPIMS沉积技术沉积氧化氮化硅薄膜的表征","authors":"Bo-huei Liao, C. Hsiao, M. Shiao, Shih-Hao Chan, Sheng-Hui Chen, Sheng-De Weng","doi":"10.1364/OIC.2019.WD.2","DOIUrl":null,"url":null,"abstract":"In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering. The transmittance of SiON films increased from 13.6% to 88.9% at 215 nm after introducing 2.2 sccm O2 gas. The extinction coefficient was smaller than 1×10–3 from 250nm to 700nm. The average transmittance of the SiON films on the glass in the visible range was 86 % and its hardness was 24 Gpa as introducing 2 sccm O2 gas.","PeriodicalId":119323,"journal":{"name":"Optical Interference Coatings Conference (OIC) 2019","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of silicon oxynitride films deposited by HIPIMS deposition technique\",\"authors\":\"Bo-huei Liao, C. Hsiao, M. Shiao, Shih-Hao Chan, Sheng-Hui Chen, Sheng-De Weng\",\"doi\":\"10.1364/OIC.2019.WD.2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering. The transmittance of SiON films increased from 13.6% to 88.9% at 215 nm after introducing 2.2 sccm O2 gas. The extinction coefficient was smaller than 1×10–3 from 250nm to 700nm. The average transmittance of the SiON films on the glass in the visible range was 86 % and its hardness was 24 Gpa as introducing 2 sccm O2 gas.\",\"PeriodicalId\":119323,\"journal\":{\"name\":\"Optical Interference Coatings Conference (OIC) 2019\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Interference Coatings Conference (OIC) 2019\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/OIC.2019.WD.2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Interference Coatings Conference (OIC) 2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/OIC.2019.WD.2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of silicon oxynitride films deposited by HIPIMS deposition technique
In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering. The transmittance of SiON films increased from 13.6% to 88.9% at 215 nm after introducing 2.2 sccm O2 gas. The extinction coefficient was smaller than 1×10–3 from 250nm to 700nm. The average transmittance of the SiON films on the glass in the visible range was 86 % and its hardness was 24 Gpa as introducing 2 sccm O2 gas.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
